期刊
ADVANCED MATERIALS
卷 24, 期 31, 页码 4255-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201201248
关键词
DNA Interlayer; Charge Injection Barriers; Contact Resistance; Interfacial Dipole; Organic Field-Effect Transistors
类别
资金
- Department of Energy Office of Basic Energy Sciences [DE-SC0002368]
- Camille Dreyfus Teacher Scholar Award
- Alfred Sloan Research Fellowship program
By inserting DNA interlayers beneath the Au contact, the contact resistance of PC70BM field-effect transistorss is reduced by approximately 30 times at a gate bias of 20 V. The electron and hole mobilities of ambipolar diketopyrrolopyrrole transistors are increased by one order of magnitude with a reduction of the threshold voltage from 12 to 6.5 V.
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