High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes

Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm(2)/V.s) with a high on/off ratio (10(6)). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.