期刊
ADVANCED MATERIALS
卷 24, 期 26, 页码 3509-3514出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201200683
关键词
high mobility; oxide semiconductors; thin film transistors; defect reduction; oxygen deficiency
类别
资金
- National Science Council of Taiwan [100-2628-E-009-018-MY3]
- E Ink Holdings Inc.