4.8 Article

Transfer-Free Growth of Few-Layer Graphene by Self-Assembled Monolayers

期刊

ADVANCED MATERIALS
卷 23, 期 38, 页码 4392-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201102526

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资金

  1. star-faculty [2010-0029653]
  2. World Class University (WCU) [2008-000-10029-0]
  3. National Research Foundation of Korea (NRF) [2010-00429]
  4. Ministry of Education, Science and Technology (MEST) of Korea
  5. National Research Foundation of Korea [2010-00429] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Graphene layers are directly synthesized on an oxide substrate without transfer. The catalytic structure aids graphene formation without the vaporization of a self-assembled monolayer (SAM) material and induces direct growth of graphene on the substrate. Film uniformity and the number of graphene layers are modulated. The catalytic structure and growth process provide a robust method for transfer-free graphene growth with uniform thickness.

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