期刊
ADVANCED MATERIALS
卷 23, 期 30, 页码 3460-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201101340
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资金
- National Research Foundation (NRF) [2009-0093485, 2010-0020414]
- Converging Research Center Program [2010K001066]
- National Research Foundation of Korea (NRF) [2011-0006270]
- National Research Foundation of Korea [2008-0060610, 2009-0093485, 2010-0020414, 2010-50171] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Hydrophobic self-assembled monolayers (SAMs) with alkyl chains of various lengths were inserted between CVD-grown graphene layers and their SiO2 substrates (figure). As the SAM alkyl chain length increased, substrate-induced doping was suppressed by the ordered close-packed structure of SAMs with long alkyl chains. Accordingly, graphene transistors constructed on SAMs with long alkyl chains exhibited higher electron/hole mobilities with lower Dirac point voltages.
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