期刊
ADVANCED MATERIALS
卷 23, 期 32, 页码 3712-+出版社
WILEY-BLACKWELL
DOI: 10.1002/adma.201101399
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资金
- Fundacio Privada Cellex Barcelona
- European Union [PIRG06-GA-2009-256355]
Bi2S3 nanocrystals are employed as an n-type, non-toxic, inorganic, solution-processed semiconductor in thin film solar cells. The first solution processed-inorganic p-n junction based on p-type PbS QDs and n-type Bi2S3 nanocrystals with both phases contributing to photo-carrier generation is demonstrated. The reported devices show a power conversion efficiency of 1.6% for 860 nm PbS QDs and over 1% for 1300 nm PbS QDs.
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