Top-Gate Organic Field-Effect Transistors with High Environmental and Operational Stability

Top-gate organic field-effect transistors are demonstrated using a bilayer gate dielectric to propose a new compensation mechanism that leads to high operational stability. Neither changes in mobility nor threshold voltage changes are observed after 20 000 cycles of the transfer characteristics or after 24 hours under constant direct-current bias stress. These OFETs are also demonstrated to be air stable for up to 210 days.