期刊
ADVANCED MATERIALS
卷 23, 期 26, 页码 2981-+出版社
WILEY-BLACKWELL
DOI: 10.1002/adma.201100610
关键词
-
类别
资金
- Ministry of Economy of the Republic of China [98-EC-17-A-08-S1-042]
- National Science Council of the Republic of China [NSC-99-2119-M-007-010]
An idealized bipolar host material and dopant are synthesized for deep-red phosphorescent organic light-emitting diodes (PhOLEDs). The host material exhibits a low-lying lowest unoccupied molecular orbital and high thermal and morphological stability, while the dopant emits sharply at 616 nm with a full width at half-maximum of only 39 nm. The new host/guest combination for the deep-red device yields the highest device efficiencies to date.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据