期刊
ADVANCED MATERIALS
卷 23, 期 39, 页码 4491-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201102232
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资金
- Portuguese Science Foundation [PTDC/CTM/103465/2008, PTDC/EEA-ELC/099490/2008]
- ERC [228144]
- APPLE [FP7-NMP-2010-SME/262782-2]
- Royal Society
- Fundação para a Ciência e a Tecnologia [PTDC/CTM/103465/2008, PTDC/EEA-ELC/099490/2008] Funding Source: FCT
A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n-(In-Ga-Zn-O) and p-type (SnOx) active oxide semiconductors and uses a transparent conductive oxide (In-Zn-O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric.
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