4.8 Article

All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics

期刊

ADVANCED MATERIALS
卷 23, 期 21, 页码 2448-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201004588

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资金

  1. National Natural Science Foundation [60901050, 60911130231, 20902105, 60736004]
  2. Major State Basic Research Development Program [2011CB932303]
  3. Chinese Academy of Sciences
  4. Beijing Municipal Education Commission [YB20098000104]

向作者/读者索取更多资源

Exploration of high-performance solution-processed n-channel organic transistors with excellent stability is a critical issue for the development of powerful printed circuits. Solution-processed, bottom-gate transistors exhibiting a record electron mobility of up to 1.2 cm(2) V-1 s(-1) are reported. The devices show excellent stability, which enables the construction of all-solution-processed flexible circuits with all fabrication procedures performed in air.

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