期刊
ADVANCED MATERIALS
卷 23, 期 21, 页码 2448-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201004588
关键词
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类别
资金
- National Natural Science Foundation [60901050, 60911130231, 20902105, 60736004]
- Major State Basic Research Development Program [2011CB932303]
- Chinese Academy of Sciences
- Beijing Municipal Education Commission [YB20098000104]
Exploration of high-performance solution-processed n-channel organic transistors with excellent stability is a critical issue for the development of powerful printed circuits. Solution-processed, bottom-gate transistors exhibiting a record electron mobility of up to 1.2 cm(2) V-1 s(-1) are reported. The devices show excellent stability, which enables the construction of all-solution-processed flexible circuits with all fabrication procedures performed in air.
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