期刊
ADVANCED MATERIALS
卷 23, 期 16, 页码 1894-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201003935
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资金
- Engineering and Physical Sciences Research Council (EPSRC) [EP/F023200]
- Research Councils UK (RCUK)
- Royal Academy of Engineering
Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).
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