4.8 Article

High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

期刊

ADVANCED MATERIALS
卷 23, 期 16, 页码 1894-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201003935

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资金

  1. Engineering and Physical Sciences Research Council (EPSRC) [EP/F023200]
  2. Research Councils UK (RCUK)
  3. Royal Academy of Engineering

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Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).

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