4.8 Article

n-Doping of Organic Electronic Materials using Air-Stable Organometallics

期刊

ADVANCED MATERIALS
卷 24, 期 5, 页码 699-+

出版社

WILEY-BLACKWELL
DOI: 10.1002/adma.201103238

关键词

doping; organic electronics; charge transport; organometallics

资金

  1. Solvay S.A.
  2. Office of Naval Research [N00014-11-1-0313]
  3. National Science Foundation [DMR-1005892]
  4. National Science Foundation through the Science and Technology Center [DMR-0120967]
  5. Direct For Mathematical & Physical Scien
  6. Division Of Materials Research [1005892] Funding Source: National Science Foundation

向作者/读者索取更多资源

Air-stable dimers of sandwich compounds including rhodocene and (pentamethylcyclopentadienyl)(arene) ruthenium and iron derivatives can be used for n-doping electron-transport materials with electron affinities as small as 2.8 eV. A p-i-n homojunction diode based on copper phthalocyanine and using rhodocene dimer as n-dopant shows a rectification ratio of greater than 106 at 4 V.

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