相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Increased Color-Conversion Efficiency in Hybrid Light-Emitting Diodes utilizing Non-Radiative Energy Transfer
Soontorn Chanyawadee et al.
ADVANCED MATERIALS (2010)
Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots
Je-Hyung Kim et al.
APPLIED PHYSICS LETTERS (2010)
Highly efficient yellow photoluminescence from {11-22} InGaN multiquantum-well grown on nanoscale pyramid structure
Taek Kim et al.
APPLIED PHYSICS LETTERS (2010)
Improved internal quantum efficiency of green emitting InGaN/GaN multiple quantum wells by in preflow for InGaN well growth
Muthusamy Senthil Kumar et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy
W. Feng et al.
JOURNAL OF APPLIED PHYSICS (2008)
Colloidal quantum-dot light-emitting diodes with metal-oxide charge transport layers
J. M. Caruge et al.
NATURE PHOTONICS (2008)
Green light-emitting diodes with self-assembled In-rich InGaN quantum dots
Il-Kyu Park et al.
APPLIED PHYSICS LETTERS (2007)
Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs
Kwang-Choong Kim et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2007)
Photoluminescence study of semipolar {1011} InGaN/GaN multiple quantum wells grown by selective area epitaxy
Hongbo Yu et al.
APPLIED PHYSICS LETTERS (2007)
Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides
Yong-Hoon Cho et al.
APPLIED PHYSICS LETTERS (2006)
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
Shigefusa F. Chichibu et al.
NATURE MATERIALS (2006)
Near-red emission from site-controlled pyramidal InGaN quantum dots -: art. no. 163121
V Pérez-Solórzano et al.
APPLIED PHYSICS LETTERS (2005)
Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets
S Srinivasan et al.
APPLIED PHYSICS LETTERS (2005)
InGaN/GaN blue light-emitting diodes with self-assembled quantum dots
YK Su et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2004)
Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence
S Khatsevich et al.
JOURNAL OF APPLIED PHYSICS (2004)
Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
PR Edwards et al.
APPLIED PHYSICS LETTERS (2004)
Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well
M Achermann et al.
NATURE (2004)
Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes
S Watanabe et al.
APPLIED PHYSICS LETTERS (2003)
Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells
SF Chichibu et al.
APPLIED PHYSICS LETTERS (2001)