Multilevel Information Storage in Ferroelectric Polymer Memories

Multilevel Information Storage in Ferroelectric Polymer Memories Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly( vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of a spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by implementing imprinted ferroelectric polymer films as the insulator and gate dielectric layers, respectively.