期刊
ADVANCED MATERIALS
卷 23, 期 31, 页码 3531-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201101570
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资金
- Department of Energy [DE-SC0001085]
- FENA [2009-NT-2048]
- National Research Foundation of Korea (NRF) [2010-0020207]
- Ministry of Education, Science and Technology (MEST)
- U.S. Department of Energy (DOE) [DE-SC0001085] Funding Source: U.S. Department of Energy (DOE)
Pattern array of CVD-grown single layer graphene (SLG) is demonstrated by using a micro-patterned PDMS stamp. These ultrathin SLG electrodes can be used as the source and drain for organic field effect transistors. The devices have high hole mobilities exceeding 10 cm(2)/Vs, high on-off current ratios, i.e., larger than 10, and a low threshold voltage for switching.
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