期刊
ADVANCED MATERIALS
卷 23, 期 41, 页码 4811-+出版社
WILEY-BLACKWELL
DOI: 10.1002/adma.201101801
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资金
- National Natural Science Foundation of China [61176044, 11074224, 10574112]
- Science and Technology Project on Key Problems of Henan Province [082101510007]
A near-infrared (NIR) light-emitting diode is fabricated by constructing a GaN/Si nanoheterostructure array by growing GaN nanograins onto a silicon nanoporous pillar array (Si-NPA). A strong and tunable NIR electroluminescence is observed and the luminescent mechanism is attributed to the carrier radiative recombination occurring at the interface between GaN and Si-NPA.
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