4.8 Article

High Electron Mobility in Air for N,N′-1H,1H-Perfluorobutyldicyanoperylene Carboxydi-imide Solution-Crystallized Thin-Film Transistors on Hydrophobic Surfaces

期刊

ADVANCED MATERIALS
卷 23, 期 32, 页码 3681-+

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201101467

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资金

  1. NEDO, Japan
  2. MEXT, Japan [22245032, 21108514]
  3. Grants-in-Aid for Scientific Research [22245032, 23686005, 21108514] Funding Source: KAKEN

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High-mobility and air-stable n-type organic field transistors based on solution-crystallized N,N'-1H,1H-perfluorobutyldicyanoperylenecarboxydi-imide (PDIFCN2) are developed. Electron mobility as high as 1.3 cm(2) V-1 s(-1) is achieved owing to the almost-perfect periodic crystal packing.

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