期刊
ADVANCED MATERIALS
卷 23, 期 35, 页码 4063-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201102395
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资金
- National Research Foundation of Korea (NRF) [2009-0080567, 2010-0020416]
- Korean Ministry of Education, Science and Technology (MEST)
- NRF
- Korean MEST [2010-0011608]
- World Class University [R322009000100820]
- NRF [2009-0083380]
- National Research Foundation of Korea [2009-0080567, 2009-0083380, 2010-0011608] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A TiO2/VO2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.
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