Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator

A relaxor ferroelectric polymer poly( vinylidene fl uoride-trifl uoroethylenechlorofl oroethylene) exhibits a high relative dielectric constant (k) (similar to 60). The high-k polymer is used successfully in solution processable low-voltage organic thin fi lm transistors (OTFTS) as the gate insulator for the fi rst time. Both n-channel and p-channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm2 V-1 s(-1) at an operating voltage of 3 V.