4.8 Article

Tailoring Interface Structure in Highly Strained YSZ/STO Heterostructures

期刊

ADVANCED MATERIALS
卷 23, 期 44, 页码 5268-5274

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201102106

关键词

epitaxy; thin films; charge transport; structure-property relationships

资金

  1. Spanish MICINN [MAT 2008 06517, CSD2009-00013, CAM S2009-MAT 1756]
  2. European Research Council
  3. Materials Sciences and Engineering Division, Office of Basic Energy Sciences, U.S. Department of Energy
  4. U.S. Department of Energy [DE-FG02-09ER46554]
  5. McMinn Endowment
  6. MICINN
  7. JCCM

向作者/读者索取更多资源

Heterostructures combining transition metal oxides, as compared to other materials, are able to accommodate very large amounts of epitaxial strain without breaking into islands or structural domains. Coherently strained interfaces are an interesting playground for the search of materials with enhanced ion diffusivities, of interest in devices for energy generation and storage. In this work we highlight the importance of the interface structure of highly strained YSZ/STO superlattices in determining an enhancement of their ionic conductivity. We show the role of growth orientation in controlling the structure and morphology of the interface. Results of density functional theory calculations are discussed, showing that the incompatibility of the oxygen positions at the interface planes plays a key role in stabilizing the high values of ionic conductivities.

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