Vacuum Lamination Approach to Fabrication of High-Performance Single-Crystal Organic Field-Effect Transistors

A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n - type crystals and SAM-coated surfaces, without perturbation.