期刊
ADVANCED MATERIALS
卷 23, 期 15, 页码 1730-+出版社
WILEY-BLACKWELL
DOI: 10.1002/adma.201004497
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-
类别
资金
- Defense Advanced Research Projects Agency [HR0011-09-3-0001]
We experimentally demonstrate and present an analytical model for a nanoscale metal/oxide/metal device that simultaneously exhibits memristance, based on oxygen vacancy drift, and current-controlled negative differential resistance, based on a metal-insulator transition instability. We show that this oxide nanodevice can be used to fabricate a continuously tunable voltage-controlled oscillator.
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