4.8 Article

Microstructures of GaN Thin Films Grown on Graphene Layers

期刊

ADVANCED MATERIALS
卷 24, 期 4, 页码 515-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201103829

关键词

GaN films; graphene; transmission electron microscopy; threading dislocations; grain boundaries

资金

  1. National Creative Research Initiative of the Korea Science and Engineering Foundations (KOSEF) [R16-2004-004-01001-0]
  2. National Research Foundation of Korea
  3. Ministry of Education, Science and Technology [20110016477]
  4. National Research Foundation of Korea [2004-0046410, 2010-0017609] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed.

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