Fabrication of Site-Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures

A novel nanofabrication method based on nitrogen passivation by hydrogen in GaAsN is presented. This approach combines a masked hydrogenation process with a very sharp H forefront in GaAsN. This allows embedding a GaAsN nanometer-sized region in a GaAs barrier, resulting in the formation of ordered arrays of nanoemitters with marked zero-dimensional spectroscopic characteristics.