期刊
ADVANCED MATERIALS
卷 22, 期 30, 页码 3298-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201000611
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- C-nano Ile-de-France program
UV LEDs: The fabrication of an ITO/ZnO-nanowires/p-GaN/In-Ga LED structure is reported with an active emitting layer made of high-quality epitaxial ZnO grown electrochemically from a solution at low temperature (85 degrees C). A narrow ultra-violet electroluminescence centered at 397 nm is obtained at room temperature starting at an applied forward bias of 4.4 V (see figure). The emission is of high brightness and stable at low applied voltages beyond 6 V.
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