期刊
ADVANCED MATERIALS
卷 22, 期 28, 页码 3071-3075出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200904441
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资金
- National Research Laboratory (NRL)
- National Core Research Centre (NCRC)
- Korean Ministry of Education, Science and Technology (MEST)
- Gwangju Institute of Science and Technology
- National Research Foundation of Korea [2007-0055761, 2008-0062153] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Organic nonvolatile memory devices fabricated on flexible substrates showed rewritable and nearly consistent switching characteristics, regardless of the bending circumstances. This stable memory performance with bending stress is a promising property for the practical memory devices in future flexible electronics.
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