4.8 Article

Three-Dimensional Integration of Organic Resistive Memory Devices

期刊

ADVANCED MATERIALS
卷 22, 期 44, 页码 5048-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201002575

关键词

-

资金

  1. Ministry of Education, Science and Technology of Korea
  2. MKE/KEIT
  3. National Research Foundation of Korea [2007-0055761] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Organic memory: Our three-dimensionally (3D) stacked 8 x 8 cross-bar array organic resistive memory devices show non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据