期刊
ADVANCED MATERIALS
卷 22, 期 33, 页码 3667-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201000583
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- U. S. Air Force Office of Scientific Research (AFOSR) [FA9550-09-1-0550]
Ultrathin silicon nanomembranes (SiNMs) on insulators under local illumination reveal a gate-controlled photovoltaic effect and negative transconductance in Schottky transistors applying both homo-and heterocontacts. Tiny variations of Schottky barriers between source and drain contacts are responsible for the photovoltaic effect in ultrathin SiNMs and can be enhanced by gate voltage and/or contact design.
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