期刊
ADVANCED MATERIALS
卷 23, 期 4, 页码 523-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201002682
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资金
- Ministry of Education, Culture, Sport, Science, and Technology of Japan [17069004, 21241038, 21750197]
- Grants-in-Aid for Scientific Research [21241038, 23245041, 17069004, 21750197] Funding Source: KAKEN
Simple solvent-vapor annealing is used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, the crystal length is enhanced and a good semiconductor/ insulator interface is obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility of 3.0 cm(2) V-1 s(-1), with a highest value of 9.1 cm(2) V-1 s(-1). The FET mobility increases as temperature decreases, which suggests intrinsic bandlike transport.
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