期刊
ADVANCED MATERIALS
卷 22, 期 12, 页码 1331-1345出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200901454
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资金
- National Natural Science Foundation of China [60736004, 50673093, 20421101]
- Major State Basic Research Development Program [2006CB806203, 2006CB932103, 2009CB623603]
- National High-Tech Research Development Program [2008AA03Z101]
- Chinese Academy of Sciences
Particular attention has been focused on n-channel thin-film transistors (OTFTs) during the last few years the potentially cost-effective circuitry-based applications in flexible electronics, such as flexible radio-frequency identity tags, smart labels, and simple displays, will benefit from this fast development. This article reviews recent progress in performance and molecular design of n-channel semiconductors in the past five years, and limitations and practicable solutions for n-channel OTFTs are dealt with from the viewpoint of OTFT constitution and geometry, molecular design, and thin-film growth conditions. Strategy methodology is especially highlighted with an aim to investigate basic issues in this field.
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