期刊
ADVANCED MATERIALS
卷 22, 期 18, 页码 2045-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903267
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资金
- Korea Government (MEST) [2009-0079103, 2009-0081999]
- Korea Government (MEST), EPB Center [2009-0063312]
- Korea Government (MEST), WCU [R32-2008-000-10180-0, R31-2008-000-10032-0]
- Korea Foundation for International Cooperation of Science and Technology
- Korea Research Foundation
- TND
- NSI-NCRC
- National Research Foundation of Korea [2007-0056639, R32-2008-000-10180-0, 2010-50312, 2009-0081999, 2009-0079103, 2008-0061956, 2009-00029] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A directed-assembly method on the basis of graphene oxide (GO) pieces is developed, which allowed us to mass-produce a uniform array of graphene-based ambipolar memory devices using only conventional microfabrication facilities. Significantly, we successfully demonstrated that this device can be operated as both conventional conductivity-switching memory and new type-switching memory by adjusting the charge density on the nanoparticles. [GRAPHICS] .
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