期刊
ADVANCED MATERIALS
卷 22, 期 17, 页码 1941-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200904415
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资金
- Henry Samueli School of Engineering and an Applied Science
- NIH [1DP2OD004342-01]
A new strategy for integrating high-dielectric-constant (high-k) dielectrics with graphene nanoribbon (GNR) is presented. Freestanding zirconium oxide nanowires are synthesized and subsequently assembled on top of GNRs as high-k gate dielectrics for top-gated GNR transistors with unprecedented performance. [GRAPHICS] .
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