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Chemically Derived Graphene Oxide: Towards Large-Area Thin-Film Electronics and Optoelectronics

期刊

ADVANCED MATERIALS
卷 22, 期 22, 页码 2392-2415

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903689

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资金

  1. NSF [ECS 0543867]
  2. Center for Advanced Structural Ceramics (CASC) at Imperial College London
  3. Royal Society
  4. Engineering and Physical Sciences Research Council [EP/F033605/1] Funding Source: researchfish
  5. EPSRC [EP/F033605/1] Funding Source: UKRI

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Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO-based thin films are discussed in relation to their potential applications in electronics and optoelectronics.

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