4.8 Article

Top-Gate Organic Thin-Film Transistors Constructed by a General Lamination Approach

期刊

ADVANCED MATERIALS
卷 22, 期 32, 页码 3537-+

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201000123

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资金

  1. National Natural Science Foundation of China [60736004, 20721061, 60911130231, 60901050, 50873107, 20825208, 20973184]
  2. Major State Basic Research Development Program [2006CB806203, 2006CB932103, 2009CB623603]
  3. Chinese Academy of Sciences

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The lamination method, an effective way to fabricate multilayer devices, is successfully applied in the fabrication of top-gate organic thin-film transitors (OTFTs), especially the solution-processed devices. The fabricated top-gate devices exhibit both high performance and good stability.

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