期刊
ADVANCED MATERIALS
卷 22, 期 38, 页码 4284-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201000985
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资金
- NSFC [10804002, 50902004]
- MOST [2007CB936202, 2009CB623703]
- Research Fund for the Doctoral Program of Higher Education (RFDP)
We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated.
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