Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers

A novel device structure is presented for amorphous oxide semiconductor thin-film transistors with high performance as well as improved electrical/optical stress stability. The highly stable transistor devices are developed using composition-modulated dual active layers. This approach could potentially be used to fabricate product-level display devices using amorphous oxide semiconductors in the near future.