期刊
ADVANCED MATERIALS
卷 22, 期 21, 页码 2371-2375出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903711
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资金
- EU through the EC [212311]
- EPSRC [EP/E023614/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E023614/1] Funding Source: researchfish
High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm(2)V(-1)s(-1) are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.
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