期刊
ADVANCED MATERIALS
卷 22, 期 43, 页码 4872-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201002229
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资金
- The Hong Kong Polytechnic University [A-PJ49]
- Research Grants Council (RGC) of Hong Kong, China [B-Q10T]
Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.
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