期刊
ADVANCED MATERIALS
卷 22, 期 24, 页码 2632-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903756
关键词
-
类别
资金
- XPS
- German Excellence Initiative via the Nanosystems Initiative Munich (NIM)
- Deutsche Forschungsgemeinschaft (DFG) [EI 518/5-1]
- Universitat Bayern e.V.
- Compint graduate school
- German Excellence Initiative
- Alexander von Humboldt Foundation
Charge transfer between GaN and organic self-assembled monolayers is demonstrated. Alignment of charge-transfer levels allows for photocatalytic cleavage of aliphatic chains on the semiconductor surface. By variation of the Fermi level within GaN and by comparison to SiC, it is shown that charge transfer can be suppressed and the stability of molecular monolayers can be enhanced in the absence of the appropriate energetic alignment.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据