4.8 Article

ZnS Branched Architectures as Optoelectronic Devices and Field Emitters

期刊

ADVANCED MATERIALS
卷 22, 期 21, 页码 2376-2380

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200903643

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  1. Chinese Academy of Sciences [GJHZ200815]
  2. Australian Research Council
  3. UQ

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A unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed.

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