4.8 Article

Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer

期刊

ADVANCED MATERIALS
卷 21, 期 2, 页码 178-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200800340

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资金

  1. Center for Materials and Processes of Self-assembly [R11-2005-048-00000-0]
  2. Ministry of Commerce, Industry and Energy
  3. Korea Science and Engineering Foundation (KOSEF) [R01-2007-000-10068-0]
  4. Korean government (MEST) [R01-2008-000-11994-0]
  5. National Research Lab Programs of the KOSEF/ MEST [ROA-2007-000-20105-0]
  6. National Research Foundation of Korea [R01-2007-000-10068-0, R01-2008-000-11994-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Tunable memory characteristics are investigated according to the metal-nanoparticle species being used in memory devices. The memory devices are fabricated using cliblock copolymer micelles as templates to synthesize nanoparticles of cobalt, gold, and a binary mixture thereof. Programmable memory characteristics show different charging/discharging behaviors according to the storage element configurations as confirmed by nanoscale device characterization.

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