Ordered High-Density Si [100] Nanowire Arrays Epitaxially Grown by Bottom Imprint Method

A novel bottom imprint method to fabricate high-quality Si [100] nanowire arrays is demonstrated. This new approach combines the functions of a high-ordering AAO template as a stamp and template simultaneously. By the protective polymer layer in the hot imprint, the vertical 40 nm Si nanowire arrays grow epitaxially on the Si substrate with a narrow size distribution