4.8 Article

Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene (DTBDT) as Semiconductor for High-Performance, Solution-Processed Organic Field-Effect Transistors

期刊

ADVANCED MATERIALS
卷 21, 期 2, 页码 213-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200802031

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资金

  1. Max Planck Society through the program ENERCHEM
  2. European Commission Project NAIMO [NMP4-CT-2004500355]
  3. German Science Foundation (Korean-German IRTG)

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The facile synthesis of a new five-ring-fused pentacene analog with four symmetrically fused thiophene ring units (Dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene, C-n-DTBDT) is presented. After aligning this material from solution, thin films for organic field-effect transistors were obtained, resulting in excellent hole mobilities of up to 1.7 cm(2) V-1 s(-1), and on/off ratio of 10(7).

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