期刊
ADVANCED MATERIALS
卷 21, 期 6, 页码 678-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200801470
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资金
- IT R&D program of MKE/IITA [2006-S079-02]
- KOSEF [R01-2006-000-11277-0]
- MKE, Republic of Korea
- Korea Evaluation Institute of Industrial Technology (KEIT) [KI001622] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [과06A1104, R01-2006-000-11277-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Transparent ZnO thin-film transistors (TFTs) with a defect-controlled channel and channel/dielectric interface maintain good photo-stability during device operation. The figure shows a cross-sectional view of a top-gate ZnO-based transparent TFT/storage capacitor cell structure, connected to front-panel organic-light-emitting-diode pixels to operate in bottom emission mode.
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