Utilizing Highly Crystalline Pyroelectric Material as Functional Gate Dielectric in Organic Thin-Film Transistors

Highly crystalline P(VDF-TrFE) materials have a large remnant polarization that causes the I-D-V-D curves to have no current saturation in the region where they normally would. This high crystallinity also results in a positive pyroelectricity, which is different from the conventional low response and nonlinear negative pyroelectricity.