4.8 Article

A Chemical Solution Approach to Epitaxial Metal Nitride Thin Films

期刊

ADVANCED MATERIALS
卷 21, 期 2, 页码 193-+

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200801959

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资金

  1. US Department of Energy (DOE)
  2. DOE EE-RE Solid State Lighting Program
  3. NSF/DMR Ceramic Program [NSF 0709831]

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Epitaxial metal nitride films are prepared using a general chemical solution approach. A polymer-assisted deposition to prepare epitaxial cubic TiN, metastable AlN, and ternary nitride Ti1-xAlxN films is demonstrated. The structural, optical and electrical properties of the films are investigated, and may be of interest for many technological applications.

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