期刊
ADVANCED MATERIALS
卷 21, 期 23, 页码 2416-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200802532
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资金
- DOE Basic Energy Sciences
- DOE EERE National Energy Technology Laboratory
- Sandia's Laboratory Directed Research and Development program
- United States Department of Energy's National Nuclear Security Administration [DE-AC04-94AI85000]
Coalescence of a vertically aligned GaN nanowire array on r-plane sapphire, a technique called nanowire-templated lateral epitaxial growth, is used to grow low-dislocation density a-plane GaN. The resulting film is connected to the lattice-mismatched substrate by nanowires, which facilitates dramatic strain relaxation and leads to a significant reduction in defects.
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