期刊
ADVANCED MATERIALS
卷 21, 期 3, 页码 329-333出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200802246
关键词
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Novel ZrInZnO semiconductor materials to resolve transistor instability for active-matrix organic light-emitting diodes are proposed. The ZrInZnO film is prepared using a cosputtering method, and presents a nanocrystal structure embedded in an amorphous matrix. The thin-film transistors fabricated show good electrical performance as well as excellent stability under long-term bias stresses.
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