Low-Temperature Solution-Processed Memory Transistors Based on Zinc Oxide Nanoparticles

We report on thin-film transistors based on ZnO nanoparticles processed from solution and with a maximum temperature of 100 degrees C. Electron mobilities up to 2.5 cm(2)V(-1)s(-1) are obtained, and top-gate TFTs show non-volatile memory properties with a large, stable hysteresis and a memory ratio of 10(5). Memory TFTs operate in ambient, have good shelf-life (>6 months), and useful endurance properties.