期刊
ADVANCED MATERIALS
卷 20, 期 16, 页码 3100-3104出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200703096
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The electroluminescence intensity of a silicon quantum dot (Si QD) light-emitting diode (LED) with an Ag layer containing Ag particles can be enhanced by 434% relative to a Si QD LED without an Ag layer. The large enhancement is attributed to an increase in radiative quantum efficiency as a result of coupling between Si ODs and localized surface plasmons and increased current injection efficiency through improved carrier tunneling into Si QDs.
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